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硅基电感模型中衬底涡流效应和分布效应分析(英文)

Analysis of substrate eddy effects and distribution effects in silicon-based inductor model
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摘要 提出了衬底涡流影响因子和分布效应发生频率的概念,该概念能够准确地反映衬底涡流效应和分布效应与衬底电阻率、电感线圈长度等参数的关系.一个制作在低阻硅和高阻硅衬底上的6圈,线圈长度为3060μm的电感,其衬底涡流影响因子分别为0.3和0.04,分布效应发生频率分别为1.5GHz和14.5GHz.实验表明,低阻硅上该电感的等效电路模型必须包含衬底涡流效应和分布效应;而高阻硅上该电感的等效电路模型可以不包含衬底涡流效应和分布效应(测试范围为0.1~12GHz),其简化等效电路模型仍具有较高的精度,误差在7%之内. The concepts of substrate eddy influence factor and distribution-effects-occurring frequency are presented. The effects of substrate resistivity and inductor spiral length on the substrate eddy and distribution effects are captured. The substrate eddy influence factors of an inductor (6 turn, 3 060 μm in length) fabricated on low ( 1 Ω. cm) and high resistivity( 1 000 Ω.cm) silicon substrates are 0. 3 and 0. 04, and the distribution-effects- occurring frequencies are 1.8 GHz and 14. 5 GHz, respectively. The measurement results show that the equivalent circuit model of the inductor on low resistivity silicon must take into consideration substrate eddy effects and distribution effects. However, the circuit model of the inductor on high resistivity silicon cannot take into account the substrate eddy effects and the distribution effects at the frequencies of interest. Its simple model shows agreement with the measurements, and the contrast is within 7%.
出处 《Journal of Southeast University(English Edition)》 EI CAS 2009年第1期57-62,共6页 东南大学学报(英文版)
基金 The National Natural Science Foundation of China(No.60676043) the National High Technology Research and Development Program of China(863Program)(No.2007AA04Z328)
关键词 平面电感 衬底涡流效应 分布效应 等效电路模型 planar spiral inductors substrate eddy effects distribution effects equivalent circuit model
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参考文献10

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