摘要
采用传统的二次球磨固相反应法制备了Bi2(Zn1/3Nb2/3-xMx)2O7(M为Sn,Zr,Ti)陶瓷,并使用X射线衍射仪、扫描电镜、介电性能测试仪等研究了Sn4+,Zr4+,Ti4+的B位替代对陶瓷烧结温度、物相、显微形貌以及介电性能的影响。结果表明:当替代量x≤0.25时,所得陶瓷均保持单一的单斜焦绿石相结构;Zr4+,Ti4+替代的陶瓷达到最致密的烧结温度与未经替代的一致,而Sn4+替代的陶瓷在1020℃烧结才可以达到最致密;用Ti4+,Zr4+替代的陶瓷晶粒尺寸与基体的相当,而Sn4+替代的陶瓷晶粒尺寸大小不一;Sn4+,Zr4+替代的陶瓷介电常数温度系数随着替代量的增加逐渐减小,Sn4+替代的陶瓷在x=0.25时为负值,Ti4+替代的陶瓷介电常数温度系数随着替代量的增加先增大后减小,但始终为正值。
The Bi2 （Zn1/3 Nb2/3 ）O7 （M was Sn, Zr, Ti） ceramics were prepared by traditional second solid phase reaction method. The effect of B site substitution of Sn^4＋ , Ti^4＋ , Zr^4＋ on the sintering temperature, microstructure and dielectric properties was investigated by means of XRD, SEM and dielectric property testing analyzer. The results show that the ceramic kept single monoclinic pyrochlore phase when Sn^4＋ , Zr^4＋ and Ti^4＋ substitution content was no more than 0. 25. The sintering temperature for the density ceramics substituted with Zr^4＋ and Ti^4＋ was both 1 000 ℃, but it was 1 020℃ for them substituted with Sn^4＋. The temperature coefficient of dielectric constant decreased gradually with the increase of substitution content of Sn^4＋ , Zr^4＋. While it increased firstly and then decreased with the increase of substitution content, and its value was always positive.
出处
《机械工程材料》
CAS
CSCD
北大核心
2009年第4期82-84,共3页
Materials For Mechanical Engineering
基金
四川省教育厅科技基金资助项目(2006C025)
