摘要
探讨了添加不同CeO2含量对Pr6O11系ZnO压敏电阻显微结构及电性能的影响,以期能满足特高压用高电位样度的应用需求。结果表明:随着CeO2掺杂量的增加,ZnO-Pr6O11系压敏电阻电位梯度和非线性系数有明显的提高,在掺杂量为1.0mol%时达到峰值,分别为548V/mm和42。XRD、SEM检测分析表明,CeO2并不与ZnO及其他氧化物生成新相,而是以CeO2的形式独立存在,抑制了Zni·的生成,致使填隙锌离子的传质能力下降,从而减小ZnO晶粒尺寸,并改善了压敏电阻的晶界结构和成分。
In order to discuss the feasibility of ZnO-Pr6O11 varistors used in the fields of high voltage. The microstructure and electrical properties of ZnO-Pr6O11varistors doped with various amount of CeO2 have been investigated in this article. The resualts of experiment indicate that adding CeO2 would greatly increase the threshold voltage and the nonlinear coefficient of the ceramics, whereas the leakage current is almost unchangeable. When the amount of CeO2 increased to 1.0mol%, the ZnO varistor achieved the optimum electrical characteristics, the threshold voltage reaches 548V/mm and the nonlinear coefficient is 42. The SEM and XRD analyses testify that the microstructure of CeO2-doped ZnO-Pr6O11 varistor ceramics was composed of ZnO grain and intergranular layer：Pr6O11, Pr2O3 and CeO2 phases only. The grain size of ZnO is diminished by Zni, which is controlled by the amount of CeO2. It also improves the structure and component of grain boundary.
出处
《中国陶瓷》
CAS
CSCD
北大核心
2009年第5期7-9,12,共4页
China Ceramics
