印刷法制备多晶硅薄膜

Preparation of Poly- Silicon Thin Films by Printing

本文以Ti O2溶胶与硅粉混合采用印刷法制备了多晶硅薄膜,利用X射线衍射、I-V测试系统、扫描电镜以及分光光度计表征了样品结构与特性.研究了薄膜退火条件及Ti O2晶相对多晶硅薄膜性能的影响.结果表明:在550℃退火1h,Ti O2为锐钛矿相的条件下,所制多晶硅薄膜的电导性最好,其电导率与其他条件下的样品相比提高了约1个数量级.

In this paper, the poly-silicon thin films are prepared by printing from TiO2 eollosol and Si powder. The structure and properties of films are characterized by XRD, I-V measurement, SEM and spectrophotometer. The effect of annealing condition and the crystalline phase of TiO2 on the properties of poly-silieon thin films are investigated. The results show that the optimal condition is annealing for one hour at 550% and TiO2 anatase phase. The conductivity of those films increases 1 order of magnitude than other samples.