用于纳秒级窄脉冲工作的大功率半导体激光器模块

High peak power semiconductor laser module for producing nanosecond pulse

介绍了一种将脉冲半导体激光器发射系统中的脉冲整形电路、驱动电路、激光器保护电路、激光器集成封装成一个激光器模块的方式。当激光器工作于纳秒级窄脉冲状态下时,激光器封装引腿产生的电抗会使得耦合进激光器的脉冲波形劣化,导致能量损失。为得到上升时间短,波形半宽窄,峰值功率大的光输出,改进了激光器管芯的结构并采用混合光电子集成的方式将驱动电路和激光器管芯封装在一个模块内,使得窄脉冲电信号高效地耦合进半导体管芯。分析验证表明,改进后的激光器模块的各项输出参数均得到改善。同等条件下,改进后的模块在光脉冲宽度为4.5 ns时,峰值功率比单独封装激光器提高6倍多。测试了激光器模块U-P曲线,得到了脉冲宽度7 ns左右,峰值光功率176 W的光脉冲输出。

A laser module was packaged by a pulse width regulated circuit, a driving circuit, a laser protection circuit and laser chips to use in a pulse semiconductor laser sending system. When a laser pulse width was around several nanoseconds, the pins of packaged lasers would introduce resistances to distort the waveform shape and to reduce the energy coupling into the laser chips. To get a high peak power laser pulse with short pulse width and fast risetime, the structure of the laser chips was improved, and an optoelectronic hybrid integration was used to package the driver and the laser chips together into a module. In this way, the short current pulses could be coupled into laser chips effectively. Analysis and experiments prove that the improved laser module can produce optical pulses with better output parameters. On the same condition, the peak optical power produced by the proposed laser module is 6 times larger than that produced by traditional packaged lasers with the same driving circuit under a pulse width around 4.5 ns. The U-P curve of the laser module was tested at a pulse width around 7 ns,and the result shows that it can obtain a peak optical power of 176 W.