硒蒸气硒化法制备CIGS薄膜的影响因子(Ⅰ) 氩气流量对CIGS薄膜结构和形貌的影响

Se VAPOR SELENIZATION METHOD PARAMETERS FOR DEPOSITION OF CIGS FILMS(Ⅰ) INFLUENCES OF Ar FLUX ON MICROSTRUCTURE AND MORPHOLOGIES OF CIGS FILMS

采用中频交流磁控溅射方法,在Mo层上沉积了CuInGa(CIG)预制膜。以Ar为载气,采用固态硒化法制备获得了Cu_(In_(1-x)Ga_x)Se_2(CIGS)吸收层薄膜,考察了Ar流量对CIGS薄膜结构和形貌的影响。采用SEM和EDS观察和分析了薄膜的表面形貌和成份,采用XRD表征了薄膜的组织结构。结果表明,在不同Ar流量下制备的CIGS薄膜均具有单一的黄铜矿相结构,薄膜具有(112)面的择优取向。随着Ar流量的增大,CIGS薄膜晶粒直径增大。当Ar流量为0.20 m^3/h时,薄膜的孔隙最少。当Ar流量达到0.40 m^3/h时,薄膜晶粒出现明显的柱状生长。当Ar流量为0.10、0.20和0.30 m^3/h时,所制得的CIGS薄膜的Cu、In、Ga原子含量比,处于弱p型的理想范围。

The CuInGa （CIG） precursors were deposited on the Mo-coated glass substrate with middle frequency a. c. magnetron sputtering by alternately sputtering CuIn and CuGa targets. Then the Cu（in1-x Gax）Se2 （CIGS） absorbers were obtained by selenizing the CIG precursors in the atmosphere of Se vapor with carrier gas of Ar. The CIGS films were characterized with X-ray diffraction, scanning electron microscopy, and energy dispersive spectroscopy to evaluate the microstructure, morphology and composition, respectively. The effects of Ar flux on the microstructure and morphologies were investigated. The results show that the microstructure of the CIGS films is mainly of chalcopyrite phase with a （112） preferred orientation at various Ar flux. The grain size increases as the Ar flux rises. The hole density is the least at the Ar flux of 0.20m^3/h. The grains grow in column at the Ar flux of 0.40m^3/h. The atomic ratios of Cu, In and Ga are in an ideal range for a CIGS films with weak p-type, which were obtained at the Ar flux between 0.10m^3/h and 0.30m^3/h.