制备温度对多孔硅光学特性的影响(英文)

Critical anodization temperature for optical transition of porous silicon

本文不同的温度下制备多孔硅。通过荧光光谱、光吸收谱、X射线光电子谱研究了多孔硅的光和结构特性。研究结果表明存在着一个制备临界温度343K,当制备温度从临界温度之下提高到临界温度之上时,多孔硅的荧光和光吸收从红移转向蓝移,同时硅2p电子结合能也从减小转向增大。

The porous silicon （PS） samples were prepared at different anodization temperature. Photolu- minescence, photo- absorbance, and X- ray photoelectron spectroscopies were used to study the structural and optical behavior of the PS. The results showed that an optical transition of porous silicon from red shift to blue shift, and Si -2p binding energy transition from low to high at a critical anodization temperature, 343 K.