90nm工艺互连线CMP金属厚度偏离统计学分析(英文)

A 90nm Process Interconnect Statistical Analysis for Metal Thickness Variation in CMP

亚100纳米工艺下CMP在铜双大马士革工艺中导致的金属厚度偏离对互连线信号完整性具有严重影响。为实现90纳米工艺下互连线精确仿真,本文提出了一种新的互连线分析算法。该方法通过估计寄生参数分布的均值和方差,实现了金属厚度偏离对互连线性能影响的统计学分析。TCAD工艺仿真试验表明该方法可有效实现对90纳米工艺互连线的精确仿真。

CMP used in copper Damascene process make metal thickness variability through full - chip se- verely because of pattern dependant within die. For accurate interconnect metric in 90nm process, we propose a novel method which can implement statistical analysis for the impact of metal thickness variation in CMP efficiently , by modeling interconnect with the parasitical parameters＇ means and standard deviations extracted from TCAD. Experiment shows the method is very practical interconnect simulation in 90nm process.