摘要
为了获得新型的窄带隙半导体可见光催化剂,以Bi(NO3)3、NH4VO3、NH3.H2O、NaOH和HNO3为原料,采用水热法在200℃温度条件下制备了BiVO4样品.采用X射线衍射光谱XRD和漫反射吸收谱DRS对Bi-VO4的物性进行了表征,并以偶氮染料甲基橙作为模拟污水研究了BiVO4的光催化性能.结果表明,BiVO4样品是单斜晶系,带隙为2.5eV的半导体,具有良好的可见光催化活性,是一类具有广泛应用前景的新型窄带隙半导体光催化剂.
In order to obtain the new narrow- band gap semiconductor photocatalyst, we synthesized the BiVO4 by the hydrothermal method in 200℃ with the Bi （NO3）3, NH4VO3, NH3· H2O, NaOH and HNO3 as raw material and made researches into the BiVO4 characterized by X - ray diffraction （XRD） and diffuse reflective spectra （DRS）, and the photocatalytic activity of BiVO4 studied with azo dye methyl orange solution as simulation sewage. The result shows that BiVO4 that is of monoclinic structure and semiconductor of band gap 2.5eV, has the excellent visible - light photocatalysis. The BiVO4 should be a kind of new narrow - band gap semiconductor photocatalyst with broad application prospects.
出处
《湖州师范学院学报》
2009年第1期57-60,共4页
Journal of Huzhou University
基金
浙江省新苗人才计划基金项目(2007R40G2200017)
湖州市自然科学基金项目(2007YZ06)
关键词
窄带隙半导体
BIVO4
光催化
narrow band - gap semiconductor
BiVO4
photocatalysis
