摘要
介绍了Solgel法制备Bi4Ti3O12薄膜的工艺过程,研究了BiTi溶胶在Si基片上的匀胶规律;用TGDTA和TEM技术研究了BiTi干凝胶的形态,并成功地在Pt/Ti/Si基片上制备了c轴取向的Bi4Ti3O12薄膜.
This paper includes solgel preparation and the properties of BiTi solution. Bismuth nitrate (Bi(NO 3) 3·5H 2O) and titanium butoxide (Ti(OC 4H 9) 4) have been used as precursor materials, acetic acid (CH 3COOH) as slovent. The stable precursor solution was prepared by mixing bismuth nitrate and titanium butoxide in acetic acid. The process of spinning gelation thin films has been investigated. The temperature of the air and the acidity of precursor solution affects greatly the quality of the gelation films. The c axis oriented Bi 4Ti 3O 12 thin films were gained on Pt/Ti/Si substrate.
出处
《湖北大学学报(自然科学版)》
CAS
1998年第1期46-50,共5页
Journal of Hubei University:Natural Science