Bi_4Ti_3O_(12)铁电薄膜溶胶凝胶法制备过程中Bi-Ti溶胶的匀胶规律研究

Solgel Process of Bismuth Titanate (Bi 4Ti 3O 12 ) Thin Films

介绍了Ｓｏｌｇｅｌ法制备Ｂｉ４Ｔｉ３Ｏ１２薄膜的工艺过程，研究了ＢｉＴｉ溶胶在Ｓｉ基片上的匀胶规律；用ＴＧＤＴＡ和ＴＥＭ技术研究了ＢｉＴｉ干凝胶的形态，并成功地在Ｐｔ／Ｔｉ／Ｓｉ基片上制备了ｃ轴取向的Ｂｉ４Ｔｉ３Ｏ１２薄膜．

This paper includes solgel preparation and the properties of BiTi solution. Bismuth nitrate (Bi(NO 3) 3·5H 2O) and titanium butoxide (Ti(OC 4H 9) 4) have been used as precursor materials, acetic acid (CH 3COOH) as slovent. The stable precursor solution was prepared by mixing bismuth nitrate and titanium butoxide in acetic acid. The process of spinning gelation thin films has been investigated. The temperature of the air and the acidity of precursor solution affects greatly the quality of the gelation films. The c axis oriented Bi 4Ti 3O 12 thin films were gained on Pt/Ti/Si substrate.