摘要
用微电化学催化腐蚀法制备了硅纳米线阵列,通过扫描电镜(SEM)观察了样品的表面形貌。用荧光光谱仪测量了有序硅纳米线阵列的光致发光特性,发现当激发波长增加时,有序硅纳米线阵列的光致发光峰位单调红移,发光强度也单调增强。对比多孔硅的发光机理和现有实验条件,对有序硅纳米线阵列可能的发光机理进行了讨论。
Silicon nano-wire arrays（SiNW） were prepared by a novel metal-catalyzed chemical etching technique. Morphologies of the samples were studied by Scanning Electron Microscope（SEM）. The photoluminescence（PL） of ordered-SiNW was investigated. It was found when the excitation wavelength increased, the PL of ordered-SiNW red shifts and the intensity of PL increases monotonously. Compared with the emission mechanism of porous silicon（PS） and our experimental conditions, a possible emission mechanism of ordered-SiNW is discussed.
出处
《半导体光电》
CAS
CSCD
北大核心
2009年第2期215-219,共5页
Semiconductor Optoelectronics
基金
四川省科技厅重点研究项目(2006Z08-001-2)
关键词
微电化学氧化还原反应
硅纳米线阵列
多孔硅
光致发光光谱
扫描电镜
发光机理
microscopic electrochemical redox reaction
silicon nano-wire arrays
pPorouscilicon~ photoluminescence spectra
scanning electron microscope
emission mechanism
