摘要
综合考虑多晶硅用氯化氢合成炉的腐蚀机理、防腐措施及工艺要求,对其进行性能分析,提出为了控制腐蚀,氯化氢合成炉的合理结构。
Considering corrosion mechanism, anti-corrosion measures and technical requirements of polysilicon by hydrogen chloride synthesis furnace, and through analysis of their performance, the reasonable structure for hydrogen chloride synthesis furnace was put forword in order to control corrosion.
出处
《广州化工》
CAS
2009年第2期43-44,共2页
GuangZhou Chemical Industry
关键词
腐蚀
氯化氢
合成炉
corrode
chloridize-hydrogen
synthesis furnace
