Cu_2S阻性存储薄膜的制备及开关特性研究

Preparation and resistive switching properties of solid electrolyte Cu_2S films

采用脉冲激光沉积(PLD)方法于室温下在Pt/TiO2/SiO2/Si(111)及高导电的Si(111)衬底上制备了Cu2S固体电解质薄膜,后经X-射线衍射、原子力显微技术对薄膜的晶体结构和表面形貌进行了表征.通过400℃退火的Cu2S薄膜在Pt/TiO2/SiO2/Si(111)衬底上取向生长,而在高导电性Si(111)衬底上则无取向生长.最好用聚焦离子束刻蚀技术及PLD方法制备了Cu/Cu2S/Pt及Cu/Cu2S/Si(111)记忆单元,这些记忆单元都显示了较好的电阻开关特性,但是在不同衬底上制备的记忆元的"关态"与"开态"的电阻比表现出较大的差异,这些差异被归结为非反应电极与Cu2S薄膜间的不同界面性质所致.

Solid electrolyte Cuz S films were prepared by using pulsed laser deposition technique on Pt/TiO2/SiO2/ Si（ 111 ） and highly conductive Si（ 111 ） substrates at room temperature. The crystal structure and surface morpholo gy of CuzS films were characterized by using X-ray diffraction （XRD） and atomic force microscopy （AFM）. The Cu2 S films prepared on Pt/TiO2/SiO2/Si（ll 1） substrates and annealed at 400 ~C were crystallized along 〈001 〉-di- rection preferably, while the preferable growth of the crystal grains in the Cu2S films prepared on the highly conduc- tive Si（ 111 ） substrates was not observed. The memory units Cu/Cu2 S/Pt and Cu/Cu2 S/Si（ 111 ） were prepared by using fused ion beam and pulsed laser deposition technique. All of these memory units show the good resistive switc hing properties, and the large difference in the resistance between the ＇on＇ and ＇off＇ states for the memory units fabricated in the different substrates were observed, which were ascribed to the different interface between the nonreactive metal electrode and Cu2 S films.