摘要
本文综述了ＳｉＣ薄膜的制备工艺及进展，介绍了物理气相沉积、化学气相沉积、等离子化学气相沉积及光化学气相沉积等各种ＳｉＣ薄膜的制备方法，简单阐述了各种工艺对薄膜性能的影响，评述了各种制备工艺的优缺点。
The preparation technology and development of SiC thin film have been reviewed in this paper. All kinds of preparation methods of SiC thin film, such as PVD, CVD, PECVD and photo CVD are introduced. The influence of various techniques on the properties of SiC thin film are also demostrated in brief. In addition, the advantages and disadvantages of all sorts of preparation methods are discussed.
出处
《材料科学与工程》
CSCD
1998年第1期36-40,共5页
Materials Science and Engineering
