摘要
综述了近年来国内外对铝箔电化学侵蚀机理的研究成果,指出了必须对铝箔隧道孔生长机制有更透彻的了解,需要控制隧道孔生长模式以便最大限度地拓展铝箔比表面积。结合实际研究结论,介绍了铝箔电化学脉冲侵蚀新模型。
The mechanism of aluminum foil etching was concluded at home and abroad, and it regarded that it was very important for increasing the surface area of aluminum foil to understand the mechanism of tunnel growth and control tunnel growth model. According to the experimental results, a new pulse electrochemical etching model was introduced.
出处
《电子元件与材料》
CAS
CSCD
北大核心
2009年第5期77-80,共4页
Electronic Components And Materials
基金
江苏省科技成果转化专项资金资助项目(No.2004074)
四川省科技攻关资助项目(No.2006,Z08-001-4)
贵州省科学技术基金资助项目(No.[2008]2207)
关键词
铝箔
侵蚀
综述
电解电容器
aluminum foil
etching
review
capacitor