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电容器用铝箔隧道孔生长机理研究进展 被引量:1

Research progress of tunnel growth in aluminum foil for capacitor
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摘要 综述了近年来国内外对铝箔电化学侵蚀机理的研究成果,指出了必须对铝箔隧道孔生长机制有更透彻的了解,需要控制隧道孔生长模式以便最大限度地拓展铝箔比表面积。结合实际研究结论,介绍了铝箔电化学脉冲侵蚀新模型。 The mechanism of aluminum foil etching was concluded at home and abroad, and it regarded that it was very important for increasing the surface area of aluminum foil to understand the mechanism of tunnel growth and control tunnel growth model. According to the experimental results, a new pulse electrochemical etching model was introduced.
出处 《电子元件与材料》 CAS CSCD 北大核心 2009年第5期77-80,共4页 Electronic Components And Materials
基金 江苏省科技成果转化专项资金资助项目(No.2004074) 四川省科技攻关资助项目(No.2006,Z08-001-4) 贵州省科学技术基金资助项目(No.[2008]2207)
关键词 铝箔 侵蚀 综述 电解电容器 aluminum foil etching review capacitor
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参考文献19

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同被引文献18

  • 1沈行素,吴琦,蒋建新.Fe、Si杂质含量对电解电容器低压阳极铝箔静电容量的影响[J].电子元件与材料,1995,14(1):1-7. 被引量:5
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  • 3肖仁贵,闫康平,严季新,王建中.高纯铝光箔化学成分对直流电侵蚀的影响[J].电子元件与材料,2007,26(8):52-54. 被引量:7
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