功率VDMOS开关特性与结构关系

Study of the relation between the switching performance and the structure of power VDMOS

ＶＤＭＯＳ的开关时间对其开关功耗和频率特性有直接影响．笔者设计和制造了３种体内结构与常规ＶＤＭＯＳ相同，而表面结构不同的器件．实验结果表明，这３种结构器件的开关时间都明显减小．

The switching times of VDMOS have a direct effect on its power loss in switching process and frequency characteristics. Three kinds of VDMOS with the same body structures but different surface structures compared to the conventional VDMOS are designed and fabricated. Experimental results show that the switching times of all the three kinds of VDMOS are much shorter.