腐蚀条件对氧化铝纳米线制备的影响

Effects of etching condition on preparation of alumina nanowires

采用阳极氧化法制备多孔阳极氧化铝(AAO)模板,研究磷酸溶液中氧化铝纳米线的化学刻蚀合成。分析磷酸溶液的浓度和反应温度对氧化铝陶瓷纳米线生长的影响,探讨化学腐蚀法制备氧化铝陶瓷纳米线的反应温度区间和溶液的浓度范围。实验结果表明,腐蚀溶液的反应温度愈高或腐蚀溶液浓度愈高,纳米线出现时间愈早,生长速率愈快,最终纳米线长度愈长。氧化铝纳米线的制备与腐蚀溶液的浓度和反应温度密切相关。在浓度为4%～10%的磷酸溶液和35～60℃的温度范围内都形成氧化铝陶瓷纳米线。

Based on anodic oxidation treatment technology, the effects of concentration of phosphatic solution and etching temperature on the synthesis of alumina nanowires were studied. The temperatures and the concentrations, which are suitable to make the alumina nanowires, were investigated. Experimental research indicates that the higher the temperature and the concentration are, the earlier the nanowires appear, the faster the nanowires are shaped, and the longer they are. Alumina nanowires can be fabricated in the phosphatic solutions with concentrations from 4% to 10% and temperatures between 35℃ and 60℃. The time for most of the alumina nanowires being etched up is also closely related to the concentration of phosphatic solution and etching temperature.