摘要
用分子束外延法(MBE)分别在经(NH4)2Sx溶液和S2Cl2溶液钝化的GaAs(100)衬底上生长了ZnSe薄膜.用室温喇曼光谱对不同处理方法的GaAs上所长ZnSe薄膜的晶体质量和ZnSe/GaAs界面进行对比研究.用喇曼散射的空间相关模型定量分析了一级喇曼散射的空间相关长度与晶体质量间的关系.根据GaAs的LO-等离子激元耦合模喇曼散射强度的变化,分析了不同S钝化方法对ZnSe/GaAs界面以及ZnSe薄膜质量的影响.结果表明,S2Cl2溶液钝化的ZnSe/GaAs样品具有较低的界面态密度和较好的晶体质量,因此S2Cl2溶液钝化的效果明显优于(NH4)2Sx溶液.
Abstract ZnSe films were grown by MBE on ( 100) GaAs substrastes passivated by (NH 4) 2S x and S 2Cl 2 solutions and characterized by room temperature Raman Scattering. The crystalline qualities of ZnSe films are studied by using the Spatial Corrlation Mode of Raman Scattering and ZnSe/GaAs interfaces are also analysised from the ratios of the intensity of the coupled longitudinal optical phonon plasma mode to that of the longitudinal optical mode of GaAs Raman peak. The results show that the ZnSe/GaAs samples passivated by S 2Cl 2 solutions have lower density of interface states and have higher crystalline qualities. The passivation effect of S 2Cl 2 solutions is much better than that of (NH 4) 2S x solutinns.