摘要
采用等离子体增强化学气相淀积法在单晶硅片表面淀积一层厚约120nm的SiNxOy薄膜,并在薄膜中注入C+,注入能量为35keV,剂量为5×1016cm-2.注C+样品在441.6nm的蓝光激发下,可以产生峰值约为550nm的光致发光.样品经600℃退火后,发光强度达到最大.
Abstract A layer of  ̄120 nm SiN x O y film was grown on crystalline silicon wafers by plasma enhanced chemical vapor deposition. Carbon ions were implanted into the film with the energy of 35 keV and the dose of 5×10 16 cm -2 . The C + implanted sample exhibits photoluminescence peaked at 550 nm under the excitation of 441.6 nm laser line, and the luminescence intensity reaches its maximum for sample thermally annealed at about 600 ℃ for 30 min.
基金
中国博士后基金
李政道物理学综合实验室正大基金