摘要
采用等离子体增强化学气相淀积法在单晶硅片表面淀积一层厚约１２０ｎｍ的ＳｉＮｘＯｙ薄膜，并在薄膜中注入Ｃ＋，注入能量为３５ｋｅＶ，剂量为５×１０１６ｃｍ－２．注Ｃ＋样品在４４１．６ｎｍ的蓝光激发下，可以产生峰值约为５５０ｎｍ的光致发光．样品经６００℃退火后，发光强度达到最大．
Abstract A layer of ￣120 nm SiN x O y film was grown on crystalline silicon wafers by plasma enhanced chemical vapor deposition. Carbon ions were implanted into the film with the energy of 35 keV and the dose of 5×10 16 cm -2 . The C + implanted sample exhibits photoluminescence peaked at 550 nm under the excitation of 441.6 nm laser line, and the luminescence intensity reaches its maximum for sample thermally annealed at about 600 ℃ for 30 min.
基金
中国博士后基金
李政道物理学综合实验室正大基金
