摘要
本文应用“幸运电子”概念，取代平均电场热载流子模型［１］，利用二维数值计算的方法，建立起一组热载流子向栅氧化层注入的注入电流和栅电流模型（包括热电子和热空穴）．通过分别对ＳＯＩ／ＭＯＳＦＥＴ和相应的体硅器件模拟计算得出：栅电流和实验数据符合得很好；体硅器件的注入电流和通常一样，最大值发生在Ｖｇ＝Ｖｄ／２处；然而在薄膜（包括中等厚膜）ＳＯＩ器件中，由于存在着前栅、背栅的耦合作用，热载流子电流变化较为复杂．栅电流不能完全表现注入电流的变化情况．
Abstract Based on two dimensional simulation, the “lucky electron” concept is successfully applied to the modeling of channel hot carrier injection current and gate current (the hot carrier includes hot electron and hot hole). Simulation results of hot carrier current in SOI/MOSFET and corresponding bulk MOSFET indicate that: the gate current agrees well with the experimental data; the injection current in bulk MOSFET, just the same as usual, peaks at V g= V d/2; but the injection current in thin film SOI/MOSFET is relatively complex due to the charge coupling between front and back gate. The gate current cannot express the whole change of injection current in thin film SOI/MOFET. Accurate simulation of injection current is necessary for reliability studies of thin film (include medium film) SOI/MOSFET’s.
