摘要
本文研究不同金属薄膜结构形成的超薄ＣｏＳｉ２膜的高温稳定性．采用离子束溅射和反应磁控溅射技术制备Ｃｏ／Ｓｉ、ＴｉＮ／Ｃｏ／Ｓｉ、Ｃｏ／Ｔｉ／Ｓｉ、ＴｉＮ／Ｃｏ／Ｔｉ／Ｓｉ不同结构，在高纯氮气下进行快速热退火（ＲＴＡ），形成ＣｏＳｉ２薄膜．应用四探针薄层电阻测试、扫描电子显微镜（ＳＥＭ）、透射电子显微镜（ＴＥＭ）进行测试．实验结果表明：ＴｉＮ覆盖层和Ｃｏ／Ｔｉ／Ｓｉ三元固相反应都是有利于形成具有良好高温稳定特性的ＣｏＳｉ２薄膜的有效方法，有望应用于深亚微米接触和互连技术中．
Abstract The thermal stability of the ultra thin CoSi 2 film has been studied. Four different thin film structures of Co/Si, TiN/Co/Si, Co/Ti/Si and TiN/Co/Ti/Si were used to form the thin CoSi 2 film . Four point probe measurements and crossectional transmission electron microscopy(XTEM) were used to characterize the thermal and morphological stability of the CoSi 2 films formed by these structures. Experimental results show that the CoSi 2 film formed by direct reaction of Co/Si is sensitive to the thermal budget. The TiN capping layer and the Co/Ti/Si ternary solid phase reaction are found to be good to form the more homogeneous and stable ultra thin CoSi 2 film .The CoSi 2 film formed by TiN(30nm)/Co(10nm)/Ti(5nm)/Si can be stable up to 1000℃ and has the potential to be used in the deep submicron ULSI technology.
基金
国家自然科学基金
上海应用材料微电子基金
