摘要
本文报道了用低压-金属有机化学气相淀积(LP-MOCVD)方法制作1.3μm应变补偿多量子阱结构材料.X射线双晶衍射摇摆曲线可清晰地看到±4级卫星峰和卫星峰间的Pendel-losong条纹.整个有源区的平均应变量几乎为零.用掩埋异质结(BH)条形工艺制备的含一级光栅的DFB激光器室温下阈值电流2~4mA,外量子效率0.33mW/mA,线性输出光功率达30mW,边模抑制比(SMSR)大于35dB.20~40℃下的特征温度T0为67K.
Abstract μm InGaAsP/InP strained compensated multi quantum wells structure grown by Low Pressure Metalorganic Chemical Vapor Deposition (LP MOCVD) was proposed. The ±4 order satellite peaks and Pendellosung stripes between satellite peaks were appeared clearly in the X ray double crystal diffraction rocking curve. The average strain of active region is nearly zero. The threshold current of Buried Heterostructure (BH) MQW DFB laser with first order grating is 2 ̄4mA mostly. The external differential quantum efficiencys is 0.33mW/mA. The side mode suppression ratio (SMSR) is more than 35dB. The linear output light power is up to 30mW. The characteristic temperature is 67K between 20 ̄40℃.