摘要
用质量分离的离子束外延（ＭＡＬＥ－ＩＢＥ或简作ＩＢＥ）法在ｎ－Ｓｉ（１１１）上生长了ＣｏＳｉ２超薄外延膜．厚度为１０～２０ｎｍ的ＣｏＳｉ２薄膜的结构特性已由ＡＥＳ、ＲＨＥＥＤ及ＲＢＳ作了研究．
Abstract Ultra thin CoSi 2 epitaxial films on n Si(111) have been grown by Mass Analyzed low Energy Ion Beam Epitaxy (MALE IBE, or IBE). The strucatural properties of CoSi 2 films with thickness from 10 to 20nm were characterized by AES、 RHEED and RBS. The experimental results show that deposition rate of Co is a key factor for CoSi 2 single crystal growth.
基金
八五攻关研究课题
