摘要
用电子回旋共振微波等离子体辅助金属有机化学气相沉积（ＥＣＲ－ＰＡＭＯＣＶＤ）法，在低温条件下，在（００１）ＧａＡｓ衬底上异质外延，生长了立方晶ＧａＮ薄膜．高分辩电镜（ＨＲＥＭ）观测与Ｘ射线衍射（ＸＲＤ）测量结果表明：ＧａＮ薄膜具有典型的闪锌矿结构；三种方法测得其晶格常数为０．４５１～０．４５７ｎｍ；在ＧａＮ／ＧａＡｓ界面处的生长模式为异质外延；ＧａＮ薄膜中的位错主要为堆垛层错与刃形位错；随着远离界面，ＧａＮ中位错密度与镶嵌组织迅速减少．
Abstract The crystalline films of cubic GaN were heteroepitaxilly grown on (001) GaAs substrates at low temperature by electron cyclotron resonance plasma assisted metallorganic vapor deposition(ECR PAMOCVD) method. The results of high resolution electron microscope (HREM) observation and X ray diffraction (XRD) measunements demonstrate that the GaN film exhibits a typical zincblende structure. Its lattice constant measured from three ways is 0.451￣0.457nm, the growth mode of GaN/GaAs interface is heteroepitaxy; the dislocations in GaN film mainly are stacking faults and edge dislocations, and the dislocation density and mosaic structures in GaN decrease rapidly away from the interface.
基金
国家自然科学基金
国家863资助
