摘要
本文从二维模拟热载流子注入电流入手，讨论了不同硅层厚度、栅氧厚度和掺杂浓度对薄层深亚微米ＳＯＩ／ＭＯＳＦＥＴ’ｓ热载流子效应的影响．模拟结果表明，对于不同的硅层厚度，沟道前表面漏结处的载流子浓度对热载流子效应起着不同的作用，有时甚至是决定性的作用．沟道前表面漏结处的载流子浓度和沟道最大电场一样，是影响薄层ＳＯＩ／ＭＯＳＦＥＴ’ｓ热载流子效应的重要因素，这也就解释了以往文献中，随着硅层减薄，沟道电场增大，热载流子效应反而减小的矛盾．模拟也显示了在一定的硅层厚度变化范围内（６０～１００ｎｍ），器件热载流子效应达到最小值，而且在这一硅层范围内，热载流子效应对硅层厚度、栅氧厚度以及掺杂浓度的变化不敏感，这对高性能深亚微米薄层ＳＯＩ／ＭＯＳＦＥＴ’ｓ设计具有重要的指导意义．
Abstract Start with 2D simulation of hot carrier injection current, we have discussed the influence of different silicon film thickness, gate oxide thickness and substrate doping on the hot carrier effects of thin film deep submicron SOI/MOSFET. Simulation results indicate that for different film thickness, the carrier concentration in front channel near the drain has different influence on the hot carrier effects, sometimes the influence is decisive. Previous conflicting reports concerning SOI device hot carrier effects may result from ignoring the influence of the carrier concentration on the hot carrier effects. The simulation also indicates that there is a thickness range (60￣100nm), in which the hot carrier effects is week and insensitive to the thickness. Furthermore, in this range, the hot carrier effects is independent of gate oxide thickness and substrate doping. These is helpful to the design of high reliability thin film submicron SOI/MOSFET.
