摘要
着重研究了甲烷浓度、基体温度等工艺参数对热丝CVD法金刚石薄膜显微结构与性能的影响。基体温度（低于1050℃）越高，甲烷浓度越低，膜中非金刚石碳的含量就越低，金刚石的晶形就越完整，晶粒也越大，因而金刚石薄膜的电阻率、初始氧化温度就越高。金刚石薄膜电阻率随温度升高而线性下降，电阻温度系数达2×1010Ω·cm／’℃。
The methane concentration and the substrate temperature were studied. As the higher the substrate temperature (lower than 1050℃)and the lower the CH4 concentration, the lower content of nondiamond carbon. the more perfect the crystal face and the bigger the grain size, and so the higher the resistivity and the initial oxidation temperature. The resistivity of diamond film decreases linearly with increasing. temperature.The coefficent of the resistivity to temperature is to 2×1010Ω. cm/℃.
出处
《炭素》
1998年第1期21-25,共5页
Carbon
基金
湖南省自然科学基金
