摘要
采用陶瓷烧结靶材、射频磁控溅射法制备了(002)择优取向的Al掺杂ZnO薄膜,着重研究了不同的热处理工艺对显微结构、光电性能的影响。结果表明,真空400℃退火能大幅提高ZAO薄膜的导电性能,并保持其平均透光率在85%以上,而非真空退火(大气环境)将使ZAO薄膜材料绝缘化,400℃真空退火时间或退火次数对导电性能无明显影响,但随退火时间和退火次数的增加薄膜组织恶化,在真空循环退火条件下尤为严重;经400℃真空退火的薄膜样品,其最低电阻率达8.4×10-4Ω.cm。
Al-doped ZnO （ZAO） thin films with a preferred （002） orientation were prepared on glass substrate by RF magnetron sputtering at room temperature. The effect of different annealing processes on microstructure, optical and electrical properties of the ZAO films was investigated. The annealing under vacuum at 400℃ can significantly improve electrical property of the ZAO thin films, and keep its transmittance to be more than 85% . But annealing under air at 400℃ evidently reduces electrical property of the ZAO Chin films. The properties of ZAO thin films is not observably improved by increasing the annealing times and time, but the surface morphology of ZAO thin films deteriorates, especially for the cyclical vacuum-annealing process. The lowest resistivity of 8.4 × 10^-4Ω· cm is obtained for the ZAO thin films vacuum-annealed at 400℃ .
出处
《材料热处理学报》
EI
CAS
CSCD
北大核心
2009年第2期53-56,共4页
Transactions of Materials and Heat Treatment
基金
广西“电子信息材料与器件”科技创新人才基金
关键词
ZAO薄膜
真空退火
导电性能
组织
ZAO thin films
vacuum annealing
conductive property
microstructure
