Bloch线存储功能芯片专用电路设计

Specific Electronic Circuit Design of Functional Chips for Bloch Line Memory

研究了场存取方式的Bloch线存取功能芯片结构，设计了配套的读写操作专用时序脉冲电路，着重分析了电路元器件参数对长下降沿梯形波变换的影响以及时序脉冲幅度、上升沿、下降沿等对读写操作区的影响，为场存取功能芯片设计提供了重要依据．

Functional chip structure with field access for Bloch line memory is studied. Specific sequenced pulsc circuits for the chips are designed for read and write operation. Emphasis is laid on the analysis of both the effects of the parameters of electronic components on the transformation of waveform to trapezoidal ones with long falling edge and the effects of sequenced pulse amplitude, rising edge, falling edge on the read and write operating space.