M-PS-S结构的V-I特性及其优化

Current-Voltage Characteristics of M-PS-S Structure and Its Optimization

选用n-，p-和p+三种半导体硅材料作为衬底，通过电化学腐蚀方法分别形成PS薄膜；在PS／S膜上再淀积一层具有一定图形的铝金属膜并焊接引线，形成了M－PS－S二极管结构；在外加直流偏置电压下分别测量它们的V－I特性，得出了不同的V－I特性曲线；V-I特性都具有整流效应．根据对所得特性的理论分析．论述了材料、工艺和结构等因素对M－PS－S特性的影响．并提出了优化设计的方法，以改善M－PS－S结构的特性，实现其在发光、敏感等方面的应用。

Thin films of porous silicon (PS) are formed respectively on three nonsilicon substrates of n-,p-,p+ by electrochemical etching. A layer of metal Aluminum is deposited on the PS/S, and leads are then welded on to give three different structures of M-PS-S diodes. The current-voltage characteristics are measured respectively under biased d. c. voltage, and all of them show unilateral conductivity property. According to the theoretical analyses of I-V characteristics, the effects of adopted material, technology and structure on the characteristics are discussed. Optimized designs to improve the characteristic of M-PS-S diodes are presented, so that the diodes can be used in the field of light-emitting and sensing.