Bridgman法生长TeO_2晶体的缺陷分析(英文)

Defects of TeO_2 Crystals Grown by Bridgman Method

采用Bridgman法生长了二氧化碲(TeO2)晶体,运用光学显微镜、电子衍射光谱、化学腐蚀等方法分析了该方法生长TeO2晶体内部的缺陷。初步讨论了散射点、微裂纹、气泡和黑点、条纹以及腐蚀坑等微缺陷的形成机理。结果表明:晶体内部的散射点来自于原料中杂质,条纹主要是由于晶体内应力引起,晶体内的气泡和黑点和晶体生长的温度密切相关,并就如何减少这些微缺陷进行了初步探讨。

TeO2 crystals were grown by Bridgman method. Optical microscopy, electronic diffraction spectrum, and chemical etching were used to investigate the crystal defects. The formation mechanism of different defects such as scatter-point, cleavage, bubble and black inclusion, striation and etch pit was discussed. The results indicated that scatter-points were resulted from impurities of starting materials. Cleavages are mainly caused by crystal stress. Formations of black inclusions and bubbles were mainly related to the growth temperatures. Furthermore, some suggestions to decrease the defects were put forward.