摘要
合成了一个新配合物EuL3phen,[HL=4,4,4-三氟-1-(4′-邻三联苯基)-1,3-丁二酮,phen=邻菲咯啉]。该化合物在半导体InGaN芯片发出的近紫外光激发下能够发出铕髥离子特征红光,发光量子效率为9%。将配合物EuL3phen和半导体395 nm发射InGaN芯片组合,成功地制备了红色发光二极管。在配合物和硅胶质量比为1∶25时,器件色坐标为x=0.6123,y=0.3128,光效为0.68 lm.W-1。
A new europium(Ⅲ) complex, EuL3phen, [HL=4, 4, 4-trifluoro-l-(4'-o-terphenyl)-1, 3-butanedione, phen= 1, 10-phenanthroline] was synthesized. The complex shows red emission of Eu^3+ ions under near ultraviolet(NUV) InGaN chip emission light with a quantum yield of 9%. Red luminescent LEDs were fabricated by assembly of EuL3phen and 395 nm-emitting InGaN chips. When the mass ratio of the complex to the silicone is 1:25, the chromaticity coordinates is x=0.6113, y=0.3125, and the efficiency of the fabricated LED with the europium complex achieves 0.68 lm·W^-1.
出处
《无机化学学报》
SCIE
CAS
CSCD
北大核心
2009年第5期828-832,共5页
Chinese Journal of Inorganic Chemistry
基金
广东湛江师范学院自然科学研究一般项目基金
国家自然科学基金(No.50672136)资助项目
关键词
铕配合物
化学合成
发光
发光二极管
europium complex
chemical synthesis
luminescence
LEDs