500 V/11 A VDMOSFET 的研究

Research on a 500 V/11 A VDMOSFET

在理论分析的基础上，设计制作了５００Ｖ／１１ＡＶＤＭＯＳＦＥＴ芯片，并且进行了失效分析，从而进一步解决了设计和工艺中存在的问题，提高了成品率．最后指出了今后努力的方向．

A VDMOSFET(500 V/11 A) was designed and fabricated on the basis of theoretical analysis in this paper. Furthermore, a fault analysis was performed and problems in designs and processes were solved to increase yield. Finally, further research needs were indicated.