摘要
本文中,我们将双结系统的散粒噪声理论应用于单电子晶体管中,并准确地推导出两态情况下单电子晶体管噪声谱的解析表达式.进而对单电子晶体管中引起散粒噪声的因素作了简要的讨论.
By applying the theory of shot noise S(ω) in a double_tunneling_junction system to the single_electronic transister (SET), derived in this paper is an exact analytical expression of the shot noise spectrum at two states, by which the factors casued noises in a SET is investigated.
出处
《华南理工大学学报(自然科学版)》
EI
CAS
CSCD
北大核心
1998年第3期73-78,共6页
Journal of South China University of Technology(Natural Science Edition)
基金
国家自然科学基金
关键词
散粒噪声
单电子晶体管
隧穿率
噪声谱
shot noise
SET
tunneling rate
noise spectrum
master equation