摘要
采用电沉积工艺制备超级电容器用钽基(RuO2/SnO2).nH2O复合薄膜,研究了初始沉积液中Sn2+与Ru3+浓度比以及热处理对制备(RuO2/SnO2).nH2O复合薄膜性能的影响。借助扫描电镜、X射线衍射仪、红外光谱对薄膜的形貌和物相进行分析,用循环伏安法(CV)对该复合薄膜电容特性进行了测量。结果表明,以沉积液中Sn2+与Ru3+浓度比为2∶1时电沉积出的样品,在温度为300℃、热处理2.5h后所制备出的复合电极薄膜材料的比电容达到385F/g。
The films of （RuO2/SnO2）·nH2O on tantalum substrate are prepared by electrodeposition. It has effect on the capacitance of （RuO2/SnO2 ）.nH2O films that the molar concentration ratio of Sn^2＋ and Ru^3＋ in the initial electrodeposition liquid and heat-treatment. Morphology and phase are studied by scan electron microscopy, X-ray diffraction and IR spectra. Capacitance of （RuO2/SnO2 ）·nH2O film is studied by the electrochemical system of CH660B. While the molar concentration ratio of Sn2＋ and Ru3＋ in the initial electrodeposition bathe is 2 ： 1, and the capacitance of （RuO2/SnO2 ）. nH2O films annealed at 300℃ in 2. 5h achieve the maximum, as high as 385F/g.
出处
《材料导报》
EI
CAS
CSCD
北大核心
2009年第8期7-10,共4页
Materials Reports
基金
国家高技术研究发展计划“863”项目(2007AA03Z240)
