有机半导体中载流子迁移率的测量方法

Measurement Methods for Charge Carrier Mobility in Organic Semiconductors

本文简要地介绍了有机半导体中载流子迁移率的几种模型,着重阐述了测量有机半导体中载流子迁移率的各种方法的测试原理。主要有如下几种:稳态(CW)直流电流-电压特性法(steady-state DC JV),飞行时间法(time of flight,TOF),瞬态电致发光法(transient electroluminescence,transient EL),瞬态电致发光法的修正方法即双脉冲方波法和线性增压载流子瞬态法(carrier extraction by linearly increasing voltage,CELIV),暗注入空间电荷限制电流(dark injection space charge limited current,DI SCLC),场效应晶体管方法(field-effect transistor,FET),时间分辨微波传导技术(time-resolved microwave conductivity technique,TRMC),电压调制毫米波谱(voltage-modulated millimeter-wave spectroscopy,VMS)光诱导瞬态斯塔克谱方法(photoinducedtransient Stark spectroscopy),阻抗(导纳)谱法(impedance(admittance)spectroscopy)。说明了各种实验方法的应用范围、使用条件和优缺点。

The models of charge carrier mobility in organic semiconductors are briefly described. The measurement principles of various experiment techniques for charge carrier mobility in organic semiconductors are especially illustrated. Which include the constant wave current-voltage （CW I-V）, time of flight （TOF）, transient electroluminescence, dark injection space charge limited current （DI SCLC）, field-effect transistor （FET）, flash-photolysis time-resolved microwave conductivity technique （ FR TRMC）, voltage-modulated millimeter-wave spectroscopy （ VMS）, photoinduced transient Stark spectroscopy, impedance （admittance） spectroscopy. The advantages, disadvantages and recent progress, the critical technical issues and the different applying fields are reviewed.