面阵硅场发射阵列的离子束刻蚀

Ar Ion Beam Etching for Silicon Field Emission Arrays

利用光刻热熔法及氩离子束刻蚀技术制作１２８×１２８元面阵硅场发射器件，采用扫描电子显微镜（ＳＥＭ）和表面探针等测试手段分析所制成的面阵硅微尖阵列和硅微台（微环尖）阵列的表面微结构形貌特点．所制成的面阵硅微尖和硅微台（微环尖）器件的图形整齐均匀，达到了预定的各项指标的要求．实验表明，所采用的器件制作方法有较大的实用价值．

The Si field emission arrays of 128×128 were fabricated by photolithography and Ar ion beam etching. The morphology of the samples prepared was analyzed by SEM and surface stylus method, and the technological properties of fabricating Si microtips were discussed. From the experimental results, it can be drawn that the technology used can be applied to fabricate microtips arrays and microplatform arrays of larger area.