摘要
简要介绍了一种基于高压场效应管(MOSFET)的纳秒级双快沿脉冲源的原理。着重从脉冲源快前沿与快后沿成形机理、高压MOSFET多管级联以及提高MOSFET输出脉冲开关速度的"过"驱动理论等几方面出发,分析了提高脉冲源输出特性的方法并通过实验验证,实验中确定由高压雪崩管及脉冲变压器组成的特殊大电流"过"驱动电路,产生了幅度大于4kV、前后沿均小于5ns的高压快脉冲。
In this paper, a pulse generator with ns grade fast rise and fall time base on high voltage MOSFET is presented. We mainly analyze and experiment the method of forming fast pulse edge, the over driving technology of MOSFET and the technology of series MOSFETs, to improve the output characteristics of pulse generator. In experiment, to switch of high voltage MOSFET use high voltage avalanche transistor and pulse transformer over spike driving techniques, the pulse amplitude is over 4kV, pulse edge is about 5ns.
出处
《核电子学与探测技术》
CAS
CSCD
北大核心
2009年第2期255-257,331,共4页
Nuclear Electronics & Detection Technology
关键词
高压MOSFET
纳秒级
“过”驱动
双快沿
High voltage MOSFET, ns grade pulse edge, Over spike driving, Double fast edge
