屏蔽材料封装CMOS器件的电子辐照损伤

Electron-induced Damage of CMOS with Shielded Packages

为了解决在评估抗辐射屏蔽封装材料的屏蔽效果时,应该以什么参数作为评判依据的问题,对屏蔽材料封装CMOS器件做了一些研究。通过比较有、无屏蔽材料封装CMOS器件在电子辐照下电参数的变化,分析了采用抗辐射屏蔽材料封装的CMOS器件受电子辐照的损伤机理。通过分析,指出了当前屏蔽材料封装存在的不足,以及在采用CMOS器件考察抗辐射屏蔽封装材料时应该重点考虑静态功耗电流。

This paper compares the change of CMOS parameter whether shielded packages or not, and discuss the damage mechanism of CMOS shielded packages. Through comparing and discussing, we point out the shortage of shielded packages. The other important conclusion of this paper is that we prove quiescent power dissipation current must be a main factor while evaluating the effect of shielded packages using CMOS device.