MOS器件总剂量效应敏感参数及其损伤阈值的概率模型分析

Analysis of Sensitive Parameter and Damage Threshold Probability Models for MOS Devices Total Dose Irradiation Effects

针对特征工艺尺寸为0.6μm NMOS进行了60Co电离辐照试验,分析了MOS器件总剂量辐照效应的原因,详细介绍了处理电离辐照试验数据的方法。建立了总剂量辐照效应的损伤阈值的统计概率模型,估计模型参数并对其进行了验证,结果表明,N型MOS的失效剂量更服从于威布尔函数分布;对不同辐照剂量下的NMOS敏感参数的损伤程度进行了统计分析,结果表明,器件的关态漏电流的增加量服从威布尔分布,关态漏电流在同等置信度下的不确定度随辐照总剂量增大。

The 60Co total dose experiment has been executed with 0.6tan NMOS, the cause of MOS device total dose irradiation effects is analysed. The Method to deal with the experiment data and to validated is detailed. The statistics probability model of MOS device irradiation damage threshold is established the model parameters are estimated and validated, as a result the weibull probability distributing is better consistent with the damage threshold. The stastistics probability of MOS device irradiation sensitive parameter is established,, the sensitive parameter is consistent with weibull probability distributing after different total dose irradiation, and the uncertainty of the the parameter is increasing following the total dose.