硅漂移探测器的制作工艺及特性研究

Fabrication and Characterizing of Silicon Drift Detectors

采用双面并行的平面工艺研制出了有源区面积5mm2的硅漂移探测器(SDD)。这种双面并行的平面工艺使得SDD绝大部分正面和背面的pn结结构能够并行完成,极大地减少了工艺步骤,降低了器件制作的难度。对研制的SDD的漏电流、电势分布、光电子的漂移特性等进行了测量和分析,对238Puα射线源的能谱进行了测量,对正常工作状态下出现的悬空阳极电位进行了分析和讨论。报道了利用阳极漏电流、光电子漂移特性、悬空阳极电位对SDD芯片进行中测和封装前快速筛选的方法。

Silicon drift detectors （SDDs） with active area of 5mm^2 were fabricated by a double-sided parallel planar technology, most of the pn junctions of both sides were aehieved simultaneously, and the fabrication processes were reduced and eased. Anode leakage current, potential distribution, photo response sensitivity and signal electrons drift eharaeteristies were investigated and discussed in details. The application of the SDD to the measurement of energy spectrum of 238Puα radiation source is presented. A method to test the SDD chips by combining the measurement of anode leakage current, signal drift features and floating anode potential has been demonstrated.