掺杂PST薄膜的制备与介电调谐性能研究

Preparation and Dielectric Tunability of K Doped PST Ferroelectric Thin Film

采用Sol-Gel法在Pt/TiO2/SiO2/Si衬底上制备了多种不同组分的(Pb0.3Sr0.7)1-xKxTiO3(PST)(x=0,1 mol%,2.5 mol%,5 mol%)多层均匀薄膜,并研究了它们的介电调谐性能。发现掺杂后薄膜的晶粒尺寸明显减小,介电常数降低及介电损耗减小。1MHz时,随K含量的从0增加至5mol%,薄膜的介电常数从841降低至539,而介电损耗由0.134减小到0.058,其微波介电综合性能改善。

（Pb0.3Sr0.7）1-xKxTiO3（PST）（x=0,1 mol % ,2.5mol%,5 mol %） uniform film of K do- ping on Pt/TiO2/SiO2/Si substrats were prepared by Sol--Gel process and their dielectric tunability were investigated. The results showed that the size of crystal are obviously diminished when K was doped into PST film,and the dielectric constant and the dielectric loss（tang）of film decreases. The dielectric constant decreased from 841 to 539 and and the dielectric loss（tanS）of film decreased from 0. 134 to 0. 058 at 1 MHz when K concentration increases from 0 to 5 mol %. Microwave dielectric comprehensive performance of PST film improved.