AgGa_(1-x)In_xSe_2晶体的蚀坑研究

Studies of Etch-pits on AgGa-(1-x)In_xSe_2 Crystal

晶体的质量是其元器件制备的关键之一,蚀坑密度(EPD)的观测是检验晶体质量的一个重要方法.用改进的Bridgman法生长出AgGa1-xInxSe2(x=0.2)单晶,通过化学腐蚀和金相显微镜研究了(101)晶面蚀坑的形貌、分布特征及其密度的大小.结果表明:采用HNO3:HCl=1:2.5的配方,在室温下腐蚀5min,获得了较好的梯形蚀坑.发现晶体的缺陷主要是位错,并初步讨论了蚀坑的成因及其克服的措施,为高质量晶体元件的制备奠定了基础.

The AgGa1-xInxSe2 （x = 0.2） single crystal was grown by the improved Bridgman method. The shape, distribution and density of etch pits on the （101） face was observed by metalloscope after chemical etching. The results showed the shape of etch pits appeared in echelon of form if by prescription of HNO3, HCl according to 1：2.5 proportion the crystal is etched for 5 minutes time at room temperature. It was found that the main defect of the crystal was dislocations, and the causes of forming the etch-pits and preventing technology were discussed. The results have established a basis for the preparation of high quality crystal devices.