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共振隧穿二极管串联电阻测量方法的比较与分析 被引量:1

Comparison and Analysis on Measurement Method of Resonant Tunneling Diode Series Resistance
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摘要 介绍了采用3种测量GaAs基RTD器件的串联电阻参数的方法:温度特性法、外加电阻法和电桥法.研究发现,不同的测试手段,得到的串联电阻值存在较大差异.对每种测量方法的原理进行了比较分析,由于3种方法分别针对RTD的不同电流区域进行测量,因而串联电阻会随着测量区域的改变而变化,导致测量结果不一致.对于RTD的不同用途要采用对应的测试方法,这为RTD在电路方面的应用奠定了基础. This paper introduces three methods through which series resistance of GaAs-RTD device can be measured. The three methods are temperature method,additional resistance method, and electric bridge method. The values of series resistance measured though the three methods are diverse. Comparing the principle of three measurement methods, the reason is that the series resistance varies with different current fields ,while the three measurement methods focus on three kinds of current fields respectively. It establishes the foundation of application in different circuits by choosing proper measurement method.
出处 《天津大学学报》 EI CAS CSCD 北大核心 2009年第5期433-437,共5页 Journal of Tianjin University(Science and Technology)
关键词 共振隧穿二极管 串联电阻 测量方法 resonant tunneling diode series resistance measurement method
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  • 1SHEARD F W, TOOMBS G A. Space-charge buildup and bistability in resonant-tunneling double-barrier structures [J] . Appl Phys Lett, 1988, 52 (15): 1228.
  • 2GOLDMAN V J, TSUI D C. Observation of intrinsic bistability in resonant-tunneling structure [J] . Phys Rev Lett, 1987, 58 (12): 1256-1259.
  • 3BROEKAERT T P E, LEE W, FONSTAD C G. Pseudomorphic In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes with peak-to-valley current ratios of 30 at room temperature [J] .Appl Phys Lett, 1988, 53 (16): 1545.
  • 4SEABAUGH A, BRAR B, BROEKAERT T, et al. Resonant-tunneling mixed-signal circuit technology [ J] . Solid-State Electronics, 1999, 43: 1355.
  • 5WAHO T, CHEN K J, YAMAMOTO M. Resonant-tunneling diode and HEMT logic circuits with multiple thresholds and multilevel output [J] . IEEE Journal of Solid-State Circuits, 1998, 33 (2): 268.
  • 6ZHONG M, ZHANG S L, GUO W L, et al. Comparison and analysis of two microwave equivalent-circuit models for resonant tunneling diode [J] . Chinese Journal of Semiconductors,2004, 25 (11): 1370.
  • 7BROWN E R, SODERSTROM J R, PARKER C D, et al.Oscillation up to 712 GHz in InAs/AISb resonant-tunneling diodes [J] . Appl Phys Lett, 1991, 58 (20): 2291.
  • 8SHIMIZU N, NAGATSUMA T, SHINAGAWA M, et d, Picosecond-switching time of In0.53Ga0.47As/AlAs resonant-tunneling diodes measured by electro-optic sampling technique [ J] .IEEE Electron Device Lett, 1995, 16 (6): 262.
  • 9SHIMIZU N, NAGATSUMA T, WAHO T, et al. In0.53Ga0.47As/ AlAs resonant tunneling diodes with switching time of 1.5 ps [J]. Electronics Letters, 1995, 31 (19): 1695.
  • 10CHOW D H, SCHULMAN J N, OZBAY E, et al. Investigation of In0.53Ga0.47As/AlAs resonant tunneling diodes for high speed switching [J] . Appl Phys Lett, 1992, 61 (14): 1685.

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