掺杂对BNCP半导体激光起爆感度的影响

Effect of Dopant on BNCP Semiconductor Laser Sensitivity

对激光敏感药剂高氯酸.四氨.双(5-硝基四唑)合钴(Ⅲ)(BNCP)进行掺杂,以半导体激光直接作用药剂的方法,研究了掺杂物的种类、含量和波长对BNCP激光起爆感度影响。结果表明:在同样的条件下,未掺杂的BNCP在激光器最大功率下都不能发火,而加入适合的掺杂物的种类和含量能够大大提高BNCP半导体激光起爆感度;在635 nm波长下,掺杂物中掺杂酞箐铜能量最低,50%发火阈值达0.24 mJ,平均延期时间2.3 ms;掺杂吸光物C,50%发火阈值达0.57 mJ,平均延期时间5.5 ms;在915 nm波长下,掺杂吸光物C含量为5%时,50%发火阈值最小,为5.06 mJ。

The effects of dopant variety, dopant content and dopant wavelength on tetraamnine bis （ 5-nitrotetrazolato ） cobalt （ Ⅲ ） perchlorate（BNCP） semiconductor laser sensitivity were studied by doping different dyestuffs into BNCP. Results show that the laser ignition threshold value is reduced apparently by adding appropriate dopant variety and dopant content. In 635 nm wavelength, the ignition energy of BNCP doped with 5% copper phthalocyanine is the lowest, and the laser 50% initiation threshold value and the initiation explosive average delay time of BNCP are 0.24 mJ and 2.3 ms. And for BNCP doped with 5% carbon black, the laser 50% initiation threshold value and the initiation explosive average delay time of BNCP are 0.57 mJ and 5.5 ms. In 915 nm wavelength,the 50% ignition threshold value of BNCP doped with 5% carbon black is the lowest （5.06 mJ）.