直流反应磁控溅射法制备氮化钛薄膜

DC Reactive Magnetron Sputtering TiN Film

研究了采用直流反应磁控溅射法制备TiN薄膜的工艺条件。研究发现：在保持其它工艺参数不变的条件下，溅射的TiN薄膜在不同温度区域存在的物相不同，薄膜的主要成分是多晶立方相TiN，240℃附近是薄膜择优取向由（111）向（200）转变的临界点。随着基底温度升高，薄膜表面粗糙度先变小后变大，沉积最佳基底温度值是330℃，该温度下薄膜的粗糙度最小，膜层致密均匀，没有大尺寸缺陷且光洁度好。

This paper studies the use of DC reactive magnetron sputtering TiN film processing conditions. The study found： In the other process parameters remain unchanged under the conditions of sputtering of TiN films at different temperature regions of different phase of existence, the main component of thin films are polycrystalline cubic phase TiN, 240 ℃ preferred orientation near the film are from （111） to （200） changes the critical point. With the substrate temperature increases, the film surface roughness become smaller after the first large, the best substrate deposition temperature are 330 ℃, the temperature of the roughness of the smallest thin-film, uniformly dense layer, there is no large-size defects and finish well.