摘要
现代微电子技术按照摩尔定律在不断发展．光刻技术也经历了从G线（436nm），I线（365nm），到深紫外248nm．及目前的193nm光刻的发展历程．相对应于各曝光波长的光刻胶也应运而生．光刻胶中的关键组分，如成膜树脂、感光剂、添加剂也随之发生变化．使光刻胶的综合性能能更好地满足集成工艺制程要求。目前集成电路制作中使用的主要光刻胶见表1。
The demand of photoresists from integrate circuit industry in China was analyzed,and the status quo of production and technology of photoresists were also introduced.In China,there was a big gap existing in supply and demand of photoresists.The recent development trends of photoresists,mainly the realization of industrialization of mainstream photoresists,were narrated.At last,the development course of photoresist technology and photoresist,as well as the trends of developing next generation photoresist technology in the world were also described.
出处
《精细与专用化学品》
CAS
2009年第9期28-31,共4页
Fine and Specialty Chemicals
