摘要
用拉曼光谱、X射线双晶衍射仪以及体式显微镜,对升华法生长的6H-SiC单晶品质、SiC单晶中的微管缺陷进行表征。通过对SiC单晶腐蚀前后的微管数目比较发现,微管尺寸和其所形成的腐蚀坑大小并不是呈线性关系,腐蚀前后用体式显微镜观察到的微管数目大致相等。从实验数据发现,微管的尺寸有最小值,这给SiC微管密度分布,提供了一种无损检测方法。
A combination of Raman, X-ray diffraction and optical microscopy is used to characterize the quality of 6H-SiC by sublimation growth and meropipes defects of SiC. A comparison of the numbers of micropipes before and after the etching of SiC shows that the dimension of etch pits is not linearly related to that of micropipes, and the number of micropipes observed in the optical microscopy before etching approximates that of mciropipes after etching. Experiment data shows that the size of mieropipes has their lower limit, which offers an indamageable testing method for the density distribution of SiC mieropipes.
出处
《电子科技》
2009年第5期75-77,共3页
Electronic Science and Technology
基金
国家重点基础研究发展规划资助项目(51327020102)
