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La_(1.875)Sr_(0.125)CuO_4/Nb:SrTiO_3(0.8wt%,0.05wt%)异质结的制备及J-V特性的研究

Fabrication of the La_(1.875)Sr_(0.125)CuO_4/Nb: SrTiO_3 (0.8wt%, 0.05wt%) Heterojunctions and Study of the J-V Properties
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摘要 利用脉冲激光沉积技术在Nb:SrTiO3(0.8wt%,0.05wt%)基片上生长了外延的La1.875Sr0.125CuO4薄膜,并在此基础上制备了异质结.异质结在很宽的温度范围内都表现出明显的整流特性,且Nb:STO基片的Nb掺杂浓度越低,异质结的整流效果就越明显. We have grown epitaxial thin films of La1.875Sr0.125CuO4/Nb： SrTiO3（0.8wt%, 0.05wt%） substrates by pulsed laser deposition technique and fabricated heterojunctions. Clear rectifying properties have been observed in a wide temperature range, and the lower doping concentration of the Nh： STO substrates is, the clearer the rectifying properties of the heterojunction.
作者 王萍 解廷月
机构地区 山西大同大学物理与电子科学学院
出处 《山西大同大学学报（自然科学版）》 2009年第2期20-22,共3页 Journal of Shanxi Datong University(Natural Science Edition)
基金 山西省自然科学基金[2009011003-1] 山西大同大学科研项目[2007Q10]
关键词 脉冲激光沉积 异质结 整流特性 pulsed laser deposition heterojunction rectifying properties
分类号 O469 [理学—凝聚态物理]
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参考文献9

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山西大同大学学报（自然科学版）
2009年 第2期

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