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Effect of LaNiO_3 Interlayer on the Dielectric Properties of Ba_(0.5)Sr_(0.5)TiO_3 Thin Film on Si Substrate

Effect of LaNiO_3 Interlayer on the Dielectric Properties of Ba_(0.5)Sr_(0.5)TiO_3 Thin Film on Si Substrate
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摘要 In this study,(100)-oriented growth of Ba_(0.5)Sr_(0.5)TiO_3(BST)/LaNiO_3(LNO) stacks was obtained on Pt(111)/SiO_2/Si substrates by r.f.magnetron sputtering.The orientation of the subsequently deposited Ba_(0.5)Sr_(0.5)TiO_3 thin film was strongly affected by the LNO under layer,and the BST thin film deposited on the(100)LNO-coated Si substrate was also found to have a significant(100)-oriented texture.Effects of LNO interlayer on the dielectric properties of BST thin films were investigated.As a result,the tunability of BST thin film was greatly improved with the insertion of(100)-oriented LNO under layer with proper thickness. In this study, (100)-oriented growth of Ba0.5Sr0.5TiO3 (BST) /LaNiO3 (LNO) stacks was obtained on Pt(111)/SiO2/Si substrates by r.f. magnetron sputtering. The orientation of the subsequently deposited Ba0.5Sr0.5TiO3 thin film was strongly affected by the LNO under layer, and the BST thin film deposited on the (100)LNO-coated Si substrate was also found to have a significant (100)-oriented texture. Effects of LNO interlayer on the dielectric properties of BST thin films were investigated. As a result, the tunability of BST thin film was greatly improved with the insertion of (100)-oriented LNO under layer with proper thickness.
出处 《Journal of Shanghai Jiaotong university(Science)》 EI 2009年第2期133-136,共4页 上海交通大学学报(英文版)
基金 the National Key Lab of Nano/Micro Fabrication Technology(No.9140C 790310060C79) the National Natural Science Foundation of China(No.60701012)
关键词 magnetron sputtering thin films ORIENTATION buffer layer dielectric properties Ba0.5Sr0.5TiO3薄膜 LaNiO3 Si衬底 介电性能 BST薄膜 RF磁控溅射 SiO2 薄膜沉积
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参考文献8

  • 1Kim W J,Chang W,Qadri S B,et al.Microwave properties of tetragonally distorted (Ba0. 5 Sr0. 5 )TiO3 thin films[].Applied Physics Letters.2000
  • 2X. H. Zhu,W. Peng,J. Miao et al.Fabrication and characterization of tunable dielectric Ba0.5Sr0.5TiO3 thin films by pulsed laser deposition[].Materials Letters.2004
  • 3B S Kang,Jang-Sik Lee,L Stan, et al./Si using biaxially oriented ion-beam-assisted-deposited MgO as templates[].Applied Physics.2004
  • 4C. M. Chu,and P. Lin.Electrical Properties and Crystal Structure of (Ba,Sr)TiO3 Films Prepared at Low Temperatures on a LaNiO3 Electrode by Radio-frequency Magnetron Sputtering[].Applied Physics Letters.1997
  • 5Q. X. Jia,,H. H.Kung,,X. D. Wu.Microstructure properties of Ba0.5Sr0.5TiO3 thin films Si with conductive SrRuO3 bottom electrodes[].Thin Solid films.1997
  • 6Jun Sung Jin,Kim Yong Sung,Lee Jai Chan.Dielectric properties of strained (BaSr)TiO3 thin films epitaxially grown on Si with thin Yttria-Stabilized Zirconia buffer layer[].Applied Physics Letters.2001
  • 7P Padmini,T R Taylor,M J Lefevre, et al.Realization of high tunability barium strontium titanate thin films by rf magnetron sputtering[].Applied Physics.1999
  • 8Shaw T M,Suo Z,Huang M.The effect of stress on the dielectric properties of barium strontium titanate thin films[].Applied Physics Letters.1999

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