摘要
文章结合过显侵蚀干膜的原理,试验设计不同的显影条件,分析干膜线路和蚀刻线路的情况,确定显影关键点及其对精细线路制作的影响。
This article based on the theory of over-development attacking the exposed dry film,designs a series of experiments with different developing parameter, through the analysis of the circumstance of developed dry film line and etched line,confirms the critical factor of development and it's influence on fine line's facture.
出处
《印制电路信息》
2009年第5期30-33,共4页
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